| PART |
Description |
Maker |
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| MRF21125S MRF21125 MRF21125SR3 |
RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| PHB55N03LTA PHD55N03LTA PHP55N03LTA |
N-channel enhancement mode field-effect transistor 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-channel enhancement mode field-effect transistor 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| FDS8926A |
Dual N-Channel Enhancement Mode Field Effect Transistor 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDS8936S |
Dual N-Channel Enhancement Mode Field Effect Transistor 5 A, 30 V, 0.04 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| H01N45A |
N-channel High Voltage MOSFET
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics Corp.
HSMC[Hi-Sincerity Mocroelectronics]
|
| DMN3150L-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
3.8 A, 30 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Diodes Inc.
Diodes Incorporated
|
| H07N60 H07N60F H07N60E |
N-Channel Power Field Effect Transistor
|
HSMC[Hi-Sincerity Mocroelectronics]
|
| H02N65 |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics
|
